| 摘要 |
A dry etching method for an iridium electrode, wherein the dry etching method includes depositing an iridium metal film on a substrate, forming a photoresist mask on the metal film in a predetermined pattern, etching the metal film which is not covered with the photoresist mask in the predetermined pattern by generating plasma using an etch gas containing an inert gas and fluorine-based gas, and removing the photoresist mask. Accordingly, no etch residues remain even if a photoresist is used as an etch mask, and it is not necessary to heat a substrate to a high temperature. In addition, since the selectivity of an iridium electrode with respect to a photoresist mask can be increased, an iridium electrode having a satisfactory etch profile can be formed.
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