发明名称 Material used for nano-imprint lithography for producing embossed nano-structure in thin film on substrate, useful in optics, optoelectronics and microelectronics, is embossed above glass transition temperature
摘要 Materials used for nano-imprint lithography for producing embossed nano-structures in thin films on substrates consist of polymers with high plasma etching resistance and thermal stability, which are embossed at 60-180, preferably 80-100 deg C above the glass transition temperature of the polymer.
申请公布号 DE10030016(A1) 申请公布日期 2002.01.24
申请号 DE20001030016 申请日期 2000.06.17
申请人 MICRO RESIST TECHNOLOGY GMBH 发明人 PFEIFFER, KARL DR.;BLEIDIESEL, GERHARD;FINK, MARION
分类号 G03F7/00;(IPC1-7):G03F7/027 主分类号 G03F7/00
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