| 摘要 |
There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3-1 and a second soft magnetic layer 3-3 formed of soft magnetic materials and an antiparallel coupling middle layer 3-2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1-2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and alpha-Ta or an alloy including an element of the selected metal.
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