发明名称 |
Thin film, method for manufacturing thin film, and electronic component |
摘要 |
A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.
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申请公布号 |
US2002008443(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US20010874713 |
申请日期 |
2001.06.05 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
YAMADA HAJIME;TAKEUCHI MASAKI |
分类号 |
H01L49/02;C23C14/06;C23C14/34;H01L41/09;H01L41/18;H01L41/24;H03H3/02;H03H9/17;(IPC1-7):C23C14/00;C23C14/32;H01P7/00;H02N2/00;H01L41/04;H01L41/08 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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