发明名称 |
CONDUCTOR LAYER NITRIDATION |
摘要 |
Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.
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申请公布号 |
US2002008292(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US19980131993 |
申请日期 |
1998.08.11 |
申请人 |
HU YONGIUN;THAKUR RANDHIR P S;DEBOER SCOTT |
发明人 |
HU YONGIUN;THAKUR RANDHIR P S;DEBOER SCOTT |
分类号 |
H01L21/28;H01L21/8242;H01L29/49;(IPC1-7):H01L21/823;H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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