发明名称 CLEANING GAS FOR SEMICONDUCTOR PRODUCTION EQUIPMENT
摘要 The present invention relates to (1) a cleaning gas for cleaning semiconductor production equipment, obtained by mixing SF6 and one or both of F2 with and NF3 with an inert gas at a specific ratio; (2) a cleaning gas for cleaning semiconductor production equipment, obtained by mixing SF6 and one or both of F2 and NF3 with an inert gas and an oxygen-containing gas at a specific ratio; (3) a method for cleaning semiconductor production equipment using the gas; and (4) a method for producing a semiconductor device including a cleaning step using the cleaning gas. By using the cleaning gas for semiconductor production equipment of the present invention which is high in the etching rate, efficient cleaning and production of semiconductor production equipment with excellent cost performance can be achieved.
申请公布号 WO0207194(A2) 申请公布日期 2002.01.24
申请号 WO2001JP06164 申请日期 2001.07.17
申请人 SHOWA DENKO K.K.;OHNO, HIROMOTO;OHI, TOSHIO;YOSHIDA, SHUJI;OHHIRA, MANABU;TANAKA, KOUTAROU 发明人 OHNO, HIROMOTO;OHI, TOSHIO;YOSHIDA, SHUJI;OHHIRA, MANABU;TANAKA, KOUTAROU
分类号 C23C16/44;H01L21/00 主分类号 C23C16/44
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