发明名称 |
Method of manufacturing a contact plug in a semiconductor device |
摘要 |
A method of manufacturing a contact plug in a semiconductor device is disclosed. In-situ thermal doping of an impurity such as phosphorous (P) during the process by which polysilicon for a contact plug is formed by selective growth method and after in-situ doping after the growth process is employed in order to increase the concentration of the impurity in the contact plug. As a result, the disclosed method can reduce the interfacial resistance at the plug to improve the electrical characteristics of a device of more than 1G bits.
|
申请公布号 |
US2002009882(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US20010879555 |
申请日期 |
2001.06.12 |
申请人 |
SHIN DONG SUK;CHEONG WOO SEOK;KIM BONG SOO |
发明人 |
SHIN DONG SUK;CHEONG WOO SEOK;KIM BONG SOO |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|