| 摘要 |
In a manufacturing method of a semiconductor device including insulation oxide layers (gate oxide layers etc.), before a step for forming an insulation oxide layer on a semiconductor circuit board, the semiconductor circuit board is held in an atmosphere containing oxygen gas (N2 (99% (volume))+O2 (1% (volume)), for example) at temperature X (400° C.<X<750° C.) for a preset period. Preferably, the preset period for the holding step is set between 5 minutes and 10 minutes, and the concentration of the oxygen gas in the oxygen-containing atmosphere is set between 0.5% (volume) and 1.0% (volume). By the holding step at the temperature X (400° C.<X<750° C.), organic impurities (adipates etc.) adhering to the surface of the semiconductor circuit board can be removed effectively, thereby very thin and uniform insulation oxide layers having high insulation resistance can be formed on the semiconductor circuit board, and thereby a semiconductor device having satisfactory electrical characteristics and reliability can be manufactured. The efficiency of the removal of the organic impurities can be enhanced by executing VUV (Vacuum UltraViolet) light irradiation in the holding step by use of a 172 nm xenon excimer lamp etc.
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