| 摘要 |
A system for accessing a memory comprising memorization subsystems (100-1 to 100-10), e.g. standard Dual In-line Memory Modules, wherein the words to be stored are split so that several memorization subsystems are used to store one word and its associated Block Error Code (BEC) bits includes logical insulation means (145-1 to 145-10) that are associated to each memorization subsystem further comprising a backup memorization subsystem (100-11) associated to logical insulation means (145-11). When a memorization subsystem is failing or when a memorization subsystem needs to be changed, the content of this memorization subsystem is corrected thanks to the data stored in the other memorization subsystems and thanks to BEC read path macro (160) and copied in the backup memorization subsystem (100-11)
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