<p>A photodetector array whose characteristics are prevented from deteriorating because of crosstalk. An n-InP layer, an i-InGaAs layer and an n-InP layer are formed on an n-InP substrate. Zn is diffused in the n-InP layer to form a p-type diffused region, thus fabricating a pin photodiode. A protective insulating film is formed on this structure so as to have a film thickness satisfying a non-reflective condition. A light shielding film is formed on the protective insulating film so as to cover regions between the light receiving parts.</p>
