| 摘要 |
<p>A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.</p> |
