发明名称 Plasma deposition device for forming thin film
摘要 A plasma deposition device 1 comprises electrodes 13 mounted on an electrode substrate 11, gas induction holes 12 provided between said electrodes 13 for introducing material gas G to the interior, a deposition substrate 30 provided to oppose to said electrodes 13 from a predetermined distance d, and a power source 60 generating plasma from said material gas by providing energy thereto, wherein material gas G is resolved to active species R deposited on said deposition substrate 30, characterized in applying voltage to adjacent electrodes 13 so as to generate discharge DC.
申请公布号 US2002007793(A1) 申请公布日期 2002.01.24
申请号 US20010815160 申请日期 2001.03.22
申请人 SAKAI OSAMU;OKAMOTO SATOSHI;AKAI TOSHIO 发明人 SAKAI OSAMU;OKAMOTO SATOSHI;AKAI TOSHIO
分类号 C23C16/503;C23C16/24;C23C16/509;H01J37/32;H01L21/205;(IPC1-7):C23C16/00 主分类号 C23C16/503
代理机构 代理人
主权项
地址