摘要 |
A method of manufacturing a semiconductor device comprising a step of forming a plurality of resin layers, an interconnect connected electrically to an electrode of each of a plurality of semiconductor elements, and an external terminal connected electrically to the interconnect, on an aggregate of semiconductor elements having an electrode, and a step of cutting the aggregate, wherein at least one resin layer among the plurality of resin layers is formed avoiding a cutting region of the aggregate.
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