发明名称 Variable gain amplifier
摘要 The variable gain amplifier includes a parallel connection of resistance R2 and capacitor C2. Resistance R2 may be replaced by inductance L, and bipolar transistors may be replaced by other types such MOS transistors. Resistance R2 gives a current feedback for transistor Q2, thereby lowering the mutual conductance "gm" of transistor Q2, and limiting the current flowing from voltage supply V0. The emitter area ratio (the emitter area of transistor Q2: the emitter area of Q3) made to be 1: n where "n" is greater than or equal to 1, thereby controlling each current. Capacitor C2 is connected in parallel with R2 connected with the base of transistor Q2 is a bypass capacitor for lowering the impedance of the base of transistor Q2 in higher frequency range. Capacitor C2 is a peaking capacitor, because it improves the high frequency characteristics.
申请公布号 US2002008582(A1) 申请公布日期 2002.01.24
申请号 US20010888179 申请日期 2001.06.22
申请人 NEC CORPORATION 发明人 KURODA HIDEHIKO
分类号 H03G3/10;H03G1/00;H03G1/04;H03G3/00;(IPC1-7):H03G3/10 主分类号 H03G3/10
代理机构 代理人
主权项
地址