Single-substrate-processing apparatus for semiconductor process

摘要

A single-substrate-processing apparatus includes an airtight process chamber in which a worktable is supported by a pedestal. The worktable has a mount face on which a plurality of ventilation grooves are formed. A plurality of ventilation holes and three lifter holes for lifter pins are formed vertically through the worktable. The gap space between the wafer and the mount face communicates with the inner space of the process chamber around the worktable and the wafer, through the ventilation grooves, the ventilation holes, and the lifter holes.