METHOD FOR FABRICATING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for fabricating a metal oxide semiconductor field effect transistor(MOSFET) is provided to prevent a generation of defects adversely affecting the operation of the device by reducing a contact area between a gate oxide layer and a semiconductor substrate. CONSTITUTION: The gate oxide layer(2) is formed on the semiconductor substrate(1). The first conductive layer(3) is formed on the gate oxide layer. The first conductive layer and the gate oxide layer are patterned to form the first conductive layer pattern and a gate oxide layer pattern that expose the semiconductor substrate. A tetraethoxysilane(TEOS) oxide layer is formed on the semiconductor substrate and the first conductive layer pattern. The second conductive layer is formed on the resultant structure. The entire surface of the second conductive layer is anisotropically etched to form the second conductive layer pattern connected to the first conductive layer pattern on the sidewall of the first conductive layer pattern so that a gate electrode composed of the first and second conductive layer patterns is formed.