发明名称 |
Temperature control system for plasma processing apparatus |
摘要 |
A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.
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申请公布号 |
US2002007795(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US20010943806 |
申请日期 |
2001.08.30 |
申请人 |
BAILEY ANDREW D.;SCHOEPP ALAN M.;SMITH MICHAEL G. R.;KUTHI ANDRAS |
发明人 |
BAILEY ANDREW D.;SCHOEPP ALAN M.;SMITH MICHAEL G. R.;KUTHI ANDRAS |
分类号 |
H05H1/46;H01J37/32;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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