发明名称 Method of fabricating nickel etching mask
摘要 There is provided a metal etching mask fabrication method. Chrome is first sputtered on a silica layer and a photoresist, which is thicker than the chrome layer, is deposited on the chrome layer. The photoresist layer is patterned, a first nickel is sputtered on the photoresist pattern layer and onto a first portion of the chrome layer exposed by the patterning. A second nickel layer is formed on the portions of the first nickel layer in contact with the first portion of the chrome layer by electroplating. The photoresist pattern has side walls having acute angles to prevent contact between the first nickel layer on the photoresist and the second nickel layer on the first portion of the chrome layer. The photoresist pattern layer and the first nickel layer formed on the photoresist pattern layer are removed using a solvent, and the chrome layer is removed by dry etching in plasma using a gas.
申请公布号 US2002009820(A1) 申请公布日期 2002.01.24
申请号 US20010906884 申请日期 2001.07.17
申请人 JUNG SUN-TAE;CHOI DUK-YONG;LEE JOO-HOON 发明人 JUNG SUN-TAE;CHOI DUK-YONG;LEE JOO-HOON
分类号 G02B6/13;G02B6/12;G02B6/136;H01L21/033;(IPC1-7):H01L21/00 主分类号 G02B6/13
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