发明名称 Microelectronic unit forming methods and materials
摘要 Electrically conductive elements such as terminals and leads are held on a support structure by a degradable connecting layer such as a adhesive degradable by heat or radiant energy. After connecting these elements to a microelectronic element such as a chip or wafer, the conductive elements are released from the support structure by degrading the connecting layer. The support structure desirably has a predictable, isotropic coefficient of thermal expansion and such coefficient of thermal expansion may be close to that of silicon to minimize the effect of the temperature changes. The conductive elements may be mounted on a plurality of individual tiles rather than on an unitary sheet covering an entire wafer to minimize dimensional changes when the dielectric is released from the support structure.
申请公布号 US2002009827(A1) 申请公布日期 2002.01.24
申请号 US20010961878 申请日期 2001.09.24
申请人 BEROZ MASUD;FJELSTAD JOSEPH;HABA BELGACEM;PICKETT CHRISTOPHER M.;SMITH JOHN 发明人 BEROZ MASUD;FJELSTAD JOSEPH;HABA BELGACEM;PICKETT CHRISTOPHER M.;SMITH JOHN
分类号 C12M1/00;C12Q1/00;C12Q1/54;H01L21/20;H01L21/44;(IPC1-7):H01L21/44 主分类号 C12M1/00
代理机构 代理人
主权项
地址