| 发明名称 |
Growth of ultrathin nitride on Si (100) by rapid thermal N2 treatment |
| 摘要 |
A silicon containing wafer is heated in a rapid thermal processing (RTP) system in a nitrogen containing gas to a temperature an time where a thin oxide film on the wafer surface at least partially decomposes and a thin nitride or oxynitride film grows.
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| 申请公布号 |
US2002009900(A1) |
申请公布日期 |
2002.01.24 |
| 申请号 |
US20000745200 |
申请日期 |
2000.12.21 |
| 申请人 |
TAY SING PIN;LU ZHENGHONG |
发明人 |
TAY SING PIN;LU ZHENGHONG |
| 分类号 |
H01L21/283;H01L21/28;H01L21/314;H01L21/318;H01L29/51;H01L29/78;(IPC1-7):H01L21/44;H01L21/31;H01L21/469;H01L21/26;H01L21/324;H01L21/44;H01L21/477 |
主分类号 |
H01L21/283 |
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