RECEIVER COMPRISING A VARIABLE CAPACITANCE DIODE

摘要

A receiver for radio or television signals provided with a high-frequency circuit comprising a discrete semiconductor component which includes a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2 > n1 is provided, on which epitaxial layer an insulation layer having a first window is provided by means of a first laterally bounded semiconductor region of a second doping type with a doping density n3 > n2 in the epitaxial layer below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window, which semiconductor component further includes an integrated series resistor composed of a resistor path comprising two path ends on the insulation layer, the first path end being in contact, through a second window in the insulation layer, with a third laterally bounded semiconductor region of the first doping type with a doping density n5 > n2, which extends, in the vertical direction, at least through the epitaxial layer, which resistor path further comprises a second contact pad, which is arranged on the insulation layer and contacts the second path end of the resistor path, and a second laterally bounded semiconductor region in the epitaxial layer, below the second contact pad and the resistor path, said semiconductor region having a doping of the second doping type with a doping density n4, which substantially compensates for the doping of the first doping type with a doping density n2 of the epitaxial layer.