| 发明名称 |
METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK |
| 摘要 |
PROBLEM TO BE SOLVED: To shorten the time for changing or correcting the mask patterns of a mask. SOLUTION: The light shielding patterns 3a consisting of resist films for transfer of the integrated circuit patterns in addition to the light shielding patterns 2a consisting of metal for the transfer of the integrated circuit patterns are partially disposed on a mask substrate 1 constituting the photomask PM1. |
| 申请公布号 |
JP2002023340(A) |
申请公布日期 |
2002.01.23 |
| 申请号 |
JP20000206729 |
申请日期 |
2000.07.07 |
| 申请人 |
HITACHI LTD |
发明人 |
HASEGAWA NORIO;TANAKA TOSHIHIKO;OKADA JOJI;MORI KAZUTAKA;MIYAZAKI HIROSHI |
| 分类号 |
G03F1/32;G03F1/38;G03F1/40;G03F1/54;G03F1/56;G03F1/62;G03F1/68;G03F1/80;G03F7/00;H01L21/027 |
主分类号 |
G03F1/32 |
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