| 发明名称 |
POROUS SILICON CARBIDE SINTERED COMPACT AND SILICON CARBIDE METAL COMPOSITE SUITABLE FOR USE IN TABLE FOR WAFER POLISHING MACHINE |
| 摘要 |
<p>A porous silicon carbide sinter having superior thermal uniformity, thermal response, and shape stability. The porous sinter is formed by silicon carbide crystals (21, 22), and the structure formed by the silicon carbide crystals includes opened pores (23). The silicon carbide crystals have an average grain diameter of 20 mu m or greater, a porosity of 40% or less, and a thermal conductivity of 80W/m.K or more. <IMAGE></p> |
| 申请公布号 |
EP1174400(A1) |
申请公布日期 |
2002.01.23 |
| 申请号 |
EP20000977905 |
申请日期 |
2000.11.24 |
| 申请人 |
IBIDEN CO., LTD. |
发明人 |
MAJIMA, KAZUTAKA;YASUDA, HIROYUKI |
| 分类号 |
B24B7/22;B24D3/14;B24D3/34;B24D7/02;B24D7/10;C04B38/00;C04B41/45;C04B41/81;C09K3/14;C22C1/10;H01L21/306;(IPC1-7):C04B38/00;C04B41/88;C04B35/565;H01L21/304 |
主分类号 |
B24B7/22 |
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