| 摘要 |
PROBLEM TO BE SOLVED: To reduce damage to the surface of an active layer and simultaneously to improve the uniformity as an insulation film apparatus for a thin film transistor(TFT). SOLUTION: In this remote plasma CVD apparatus using a line-shaped high density plasma generating part, the main part is composed of a high density plasma generating part, a film deposition gaseous starting material feeding part directly on a substrate, an exhaust port adjacent thereto and a substrate supporting stand. Further, by plurally arranging the high density plasma parts, different thin films are continuously deposited.
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