发明名称 |
SEMICONDUCTOR PRESSURE SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a small semiconductor pressure sensor requiring non external circuits and generating no noises in the range of unnecessary pressures. SOLUTION: The semiconductor pressure sensor 1000 is formed by pasting together the frame parts and the pressure-sensitive resistance parts of a pressure switch side substrate 1001 having pressure switches previously formed, and a bridge circuit side substrate 1002 having mesa bridge circuits formed. The pressure switch side substrate 1001 can be easily formed from an SOI(Silicon On Insulator) substrate. A switch conducting silicon part 122 forms a double lever structure where a switch pressure sensitive insulating part 132 serves as a force point, switch leg part insulating layers 112A and 112B serve as fulcrums and switch contact conducting parts 14A and 14B serves as points of application. Two pressure-sensitive resistance 162 and 164 having their longitudinal direction in <1-10> direction and two other pressure-sensitive resistance 161 and 163 having their longitudinal direction in <001> direction are formed on the bridge circuit side substrate 1002 thereby the pressure sensor can be formed.
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申请公布号 |
JP2002022581(A) |
申请公布日期 |
2002.01.23 |
申请号 |
JP20000205665 |
申请日期 |
2000.07.06 |
申请人 |
TOYOTA CENTRAL RES & DEV LAB INC |
发明人 |
OMURA YOSHITERU;TSUKADA ATSUSHI;MIZUNO KENTAROU;NONOMURA YUTAKA;FUJITSUKA TOKUO;NAGASE HIROSHI |
分类号 |
G01L9/00;G01L9/04;G01L13/02;H01L29/84;(IPC1-7):G01L9/00 |
主分类号 |
G01L9/00 |
代理机构 |
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主权项 |
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地址 |
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