发明名称 METHOD OF PRODUCING RUTILE TYPE TITANIUM DIOXIDE SINGLE CRYSTAL THIN FILM
摘要 PROBLEM TO BE SOLVED: To improve the characteristics of a photoenergy conversion material by increasing crystal orientation in a method of producing a rutile type TiO2 single crystal thin film. SOLUTION: The method of producing the rutile type TiO2 single crystal thin film comprises evaporating a TiO2 target by irradiating it with a laser beam under a gaseous oxygen atmosphere and depositing the vaporized target onto an inorganic or metal substrate maintained at 200 to 800 deg.C. Anα-Al2O3 substrate on which the TiO2 single crystal thin film is formed is set to be both orientations of (0001), (10-10) and (01-12) and the temperature of the substrate is controlled to 200 to 800 deg.C, thereby the thin film of TiO2 single crystal is grown on the surface of the inorganic or metal smooth substrate.
申请公布号 JP2002020199(A) 申请公布日期 2002.01.23
申请号 JP20000200463 申请日期 2000.07.03
申请人 JAPAN ATOM ENERGY RES INST 发明人 YAMAKI TETSUYA;SUMITA YASUSHI;YAMAMOTO HARUYA;MIYASHITA ATSUMI
分类号 C30B29/16;(IPC1-7):C30B29/16 主分类号 C30B29/16
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