Power semiconductor device and method of manufacturing the same

摘要

A power semiconductor device has a plurality of U-shaped buried layers (8) buried in a drift layer (2) and made of either an insulating material or a semiconductor having a wider bandgap than that of the semiconductor of the drift layer (2). The ratio of the product of the height H of the U-shaped buried layers and the arrangement pitch d to the spacing g between adjacent ones of the U-shaped buried layers (8) is expressed as Hd/g </= 13.2. With this configuration, a power semiconductor device having both a high breakdown voltage and a low on resistance can be realized. <IMAGE>