| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing an epitaxial silicon wafer, by which the epitaxial silicon wafer almost free from occurrence of epitaxial defects can be produced without adding a new heat treatment process. SOLUTION: The method of producing the itaxial silicon wafer comprises cutting a silicon single crystal grown by a Czochralski method while doping nitrogen to obtain a wafer, then cleaning the wafer with an aqueous solution containing hydrogen fluoride(HF) and growing an epitaxial layer on the surface of the wafer. It is preferable that the cleaning mentioned above is carried out after subjecting the wafer to mirror polishing. In the method for producing the epitaxial silicon wafer, mentioned above, it is preferable to dope nitrogen in a concentration of 1×1013 to 1×1016 atom/cm3. Further, it is preferable to clean the wafer with an aqueous solution containing hydrogen fluoride(HF) in a concentration of 0.5 to 50%.
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