发明名称 |
Method for ramped current density plating of semiconductor vias and trenches |
摘要 |
A method is provided for forming conductive layers in semiconductor channels and vias by using ramped current densities for the electroplating process. The lower density currents are used initially to deposit a fine grain conductive layer in the vias and then higher densities are used to deposit a large grain conductive layer in the channel.
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申请公布号 |
US6340633(B1) |
申请公布日期 |
2002.01.22 |
申请号 |
US19990276839 |
申请日期 |
1999.03.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LOPATIN SERGEY D.;IACOPONI JOHN A. |
分类号 |
H01L21/288;H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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