| 摘要 |
A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required. As a result, the cold cathode electron emission device can be applied to a variety of fields such as a cathode ray tube (CRT), a field emission display (FED), a microwave device, an e-beam lithography, a laser and a sensor. Also, when a logic circuit, a signal processing circuit and a memory device are integrated together with the cold cathode electron emission device on a semiconductor substrate, various high efficiency devices and circuits can be fabricated which are light, thin, short and small.
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