发明名称 THIN FILM FORMING PROCESS
摘要 A process for producing an SOI substrate is disclosed which is useful for saving resources and lowering production cost. Further, a process for producing a photoelectric conversion device such as a solar cell is disclosed which can successfully separate a substrate by a porous Si layer, does not require a strong adhesion between a substrate and a jig, and can save resources and lower production cost. In a substrate having a porous layer on a nonporous layer and further having on the porous layer a layer small in porosity, the nonporous layer and the layer small in porosity are separated by the porous layer to form a thin film. A metal wire is wound around a side surface of the substrate, and a current is made to flow into the metal wire to generate a heat from the metal wire and transfer the heat preferentially to the porous layer, thus conducting the separation. The separated substrate is used for producing an SOI substrate and the separated nonporous Si layer is reutilized in a process of producing an SOI substrate.
申请公布号 CA2232796(C) 申请公布日期 2002.01.22
申请号 CA19982232796 申请日期 1998.03.20
申请人 CANON KABUSHIKI KAISHA 发明人 IWANE, MASAAKI;YONEHARA, TAKAO;OHMI, KAZUAKI
分类号 B26F3/12;B32B43/00;H01L21/20;H01L21/203;H01L21/205;H01L21/30;H01L21/304;H01L21/3063;H01L21/58;H01L21/762;H01L27/12;H01L31/18;(IPC1-7):H01L21/02 主分类号 B26F3/12
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