Defect analysis method and process control method

摘要

A defect analysis method makes it possible to quantitative grasp the influence of the number of new defects of a single process on the yield of a device. After the presence or absence of a new defect due to a specified process in each chip is judged, and defectiveness or non-defectiveness of the chip is judged by an electric tester, a plurality of chips on a wafer are classified into four groups: {circle around (1)} non-defective chip with no new defect; {circle around (2)} defective chip with no new defect; {circle around (3)} non-defective chip with new defect; and {circle around (4)} defective chip with new defect, to obtained the number of new defective chips considered to be caused only by the new defect of the specified process; a critical ratio of the new defect of the specified process, at which a chip is considered to become defective; and the number of process defective chips considered to be caused by the specified process.