发明名称 |
Resist pattern, process for the formation of the same, and process for the formation of wiring pattern |
摘要 |
A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.
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申请公布号 |
US6340635(B1) |
申请公布日期 |
2002.01.22 |
申请号 |
US19990433891 |
申请日期 |
1999.11.04 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
TOYOTA YUJI;KOSHIDO YOSHIHIRO;HASEGAWA MASAYUKI |
分类号 |
H01L21/3205;G03F7/00;G03F7/038;G03F7/039;H01L21/027;H01L21/28;H01L21/288;H05K3/00;H05K3/04;H05K3/10;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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