发明名称 Resist pattern, process for the formation of the same, and process for the formation of wiring pattern
摘要 A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.
申请公布号 US6340635(B1) 申请公布日期 2002.01.22
申请号 US19990433891 申请日期 1999.11.04
申请人 MURATA MANUFACTURING CO., LTD. 发明人 TOYOTA YUJI;KOSHIDO YOSHIHIRO;HASEGAWA MASAYUKI
分类号 H01L21/3205;G03F7/00;G03F7/038;G03F7/039;H01L21/027;H01L21/28;H01L21/288;H05K3/00;H05K3/04;H05K3/10;(IPC1-7):H01L21/44 主分类号 H01L21/3205
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