发明名称 Semiconductor device having multiple power-supply nodes and capable of self-detecting power-off to prevent erroneous operation
摘要 A potential detection portion generates from a power-supply potential of 3.3V a reference potential Vref lower than 1.5V, and compares reference potential Vref with a potential of a power-supply line of a 1.5V system to detect a power-off. An output of potential detection portion is provided to a gate of an N-channel MOS transistor via a level conversion circuit. N-channel MOS transistor fixes an output of an internal circuit that operates by a power supply of the 1.5V system.
申请公布号 US6340902(B1) 申请公布日期 2002.01.22
申请号 US20000516780 申请日期 2000.03.01
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KATO HIROSHI
分类号 G06F1/28;G11C11/407;H03K5/153;(IPC1-7):H03K5/22 主分类号 G06F1/28
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