发明名称 |
Semiconductor device having multiple power-supply nodes and capable of self-detecting power-off to prevent erroneous operation |
摘要 |
A potential detection portion generates from a power-supply potential of 3.3V a reference potential Vref lower than 1.5V, and compares reference potential Vref with a potential of a power-supply line of a 1.5V system to detect a power-off. An output of potential detection portion is provided to a gate of an N-channel MOS transistor via a level conversion circuit. N-channel MOS transistor fixes an output of an internal circuit that operates by a power supply of the 1.5V system.
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申请公布号 |
US6340902(B1) |
申请公布日期 |
2002.01.22 |
申请号 |
US20000516780 |
申请日期 |
2000.03.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATO HIROSHI |
分类号 |
G06F1/28;G11C11/407;H03K5/153;(IPC1-7):H03K5/22 |
主分类号 |
G06F1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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