| 摘要 |
The single crystal SiC according to the invention is produced in the following manner. The surface 1a of a single crystal .alpha.-SiC substrate 1 is adjusted so as to have a surface roughness equal to or lower than 2,000 angstroms RMS, and preferably equal to or lower than 1,000 angstroms RMS. On the surface 1a of the single crystal .alpha.-SiC substrate 1, a polycrystalline .alpha.-SiC film 2 is grown by thermal CVD. Thereafter, the complex M is placed a porous carbon container 3, and the outer side of the carbon container 3 is covered with .alpha.-SiC powder 4. The complex M is subjected to a heat treatment at a high temperature equal to or higher than a film growing temperature, i.e., in the range of 1,900 to 2,400.degree.C in an argon gas flow, whereby single crystal .alpha.-SiC is integrally grown on the single crystal .alpha.-SiC substrate 1 by crystal growth and recrystallization of the polycrystalline .alpha.-SiC film 2. It is possible to stably and efficiently produc e single crystal SiC of a large size which has a high quality and in which any crystal nucleus is not generated. |
