| 摘要 |
An interlayer insulating film of a first insulating material is formed between a lower interconnect layer and an upper interconnect layer in a pad region on a semiconductor substrate. An interconnect insulating film of a second insulating material is formed between adjacent interconnects in an interconnect layer in a signal delay preventing region on the semiconductor substrate. The first insulating material has higher mechanical strength than the second insulating material, and the second insulating material has a lower dielectric constant than the first insulating material. |
