| 摘要 |
A lateral IGBT comprises an N--type island region, a P-type base layer and P-type drain layer formed in the N--type island region, an N+-type source layer formed in the P-type base layer, a source electrode connected to the P-type base layer and N+-type source layer, a drain electrode connected to the P-type drain layer, a gate oxide film and field oxide film formed on the N--type island region, and a gate electrode formed on the gate oxide film. In this invention, an electrically floating P-type diffusion layer is formed in the N--type island region below the end region of the gate electrode.
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