Method of fabricating semiconductor device equipped with capacitor portion

摘要

In fabricating a capacitor portion of a semiconductor device, after forming an upper electrode, a resist pattern for forming a lower electrode is formed and etching processing of an insulating film layer and a first metal layer is carried out. Thus, the lower electrode and a wiring pattern can simultaneously be formed by etching the insulating film layer and the first metal layer after forming a resist pattern one time, without a resist pattern directly formed on the first metal layer.