Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure

摘要

A method of forming a MOS device using doped and activated n-type and p-type polysilicon layers includes forming a first doped and activated polysilicon area (either n-type and p-type) on a substrate. An isolation material layer is formed abutting the first activated area. A second doped and activated polysilicon area of opposite conductivity type from the first activated area is formed adjacent to the isolation material layer. The second activated opposite area has a height that does not exceed that of the first doped and activated polysilicon layer. Further processing may be effected to complete the MOS device. The method of the present invention eliminates ion implantation and annealing steps used in previously existing methods.