发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PURPOSE: To provide a positive type photoresist composition capable of reducing the occurrence of development defects in the production of a semiconductor device. CONSTITUTION: The positive type photoresist composition contains a resin containing specified repeating structural units and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiated with active light or radiation.
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申请公布号 |
KR20020005460(A) |
申请公布日期 |
2002.01.17 |
申请号 |
KR20010040222 |
申请日期 |
2001.07.06 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
NAKAO HAJIME;SATO KENICHIRO |
分类号 |
G03F7/039;C08K5/00;C08K5/16;C08L27/12;C08L33/06;C08L33/14;C08L45/00;C08L83/04;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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