发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE: To provide a positive type photoresist composition capable of reducing the occurrence of development defects in the production of a semiconductor device. CONSTITUTION: The positive type photoresist composition contains a resin containing specified repeating structural units and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiated with active light or radiation.
申请公布号 KR20020005460(A) 申请公布日期 2002.01.17
申请号 KR20010040222 申请日期 2001.07.06
申请人 FUJI PHOTO FILM CO., LTD. 发明人 NAKAO HAJIME;SATO KENICHIRO
分类号 G03F7/039;C08K5/00;C08K5/16;C08L27/12;C08L33/06;C08L33/14;C08L45/00;C08L83/04;G03F7/004;H01L21/027 主分类号 G03F7/039
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