发明名称 A METHOD OF IMPROVING ADHESION OF A CAP LAYER TO A POROUS MATERIAL LAYER ON A WAFER
摘要 A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.
申请公布号 WO0178127(A3) 申请公布日期 2002.01.17
申请号 WO2001US08817 申请日期 2001.03.20
申请人 PHILIPS SEMICONDUCTORS, INC.;KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 ANNAPRAGADA, RAO, V.
分类号 H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):H01L21/316 主分类号 H01L21/316
代理机构 代理人
主权项
地址