发明名称 |
A METHOD OF IMPROVING ADHESION OF A CAP LAYER TO A POROUS MATERIAL LAYER ON A WAFER |
摘要 |
A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.
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申请公布号 |
WO0178127(A3) |
申请公布日期 |
2002.01.17 |
申请号 |
WO2001US08817 |
申请日期 |
2001.03.20 |
申请人 |
PHILIPS SEMICONDUCTORS, INC.;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
ANNAPRAGADA, RAO, V. |
分类号 |
H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
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地址 |
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