发明名称 Method for fabricating 3-D structures with smoothly-varying topographic features in photo-sensitized epoxy resists
摘要 A method utilizing gray-tone exposure of a class of thick negative photosensitized epoxy resists from the substrate side of a transparent substrate and development methods that rely upon a physical distinction between polymerized (solid) and unpolymerized (liquid) photoresist at elevated temperatures may be used to fabricate 3-D structures in the photo-sensitized epoxy. Such structures may exhibit smoothly-varying topographic features with thicknesses as great as 2 mm.
申请公布号 US2002006588(A1) 申请公布日期 2002.01.17
申请号 US20010902829 申请日期 2001.07.10
申请人 AFROMOWITZ MARTIN A. 发明人 AFROMOWITZ MARTIN A.
分类号 G03F7/20;G03F7/38;(IPC1-7):G03F7/00 主分类号 G03F7/20
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