| 摘要 |
An integrated memory has memory cells with a magnetoresistive storage property. The memory cells are connected in each case between a column line and a row line. The row lines can be connected to a terminal for a selection signal for reading a data signal of one of the memory cells or writing a data signal to one of the memory cells via the column line connected to the memory cell. One or more of the column lines not connected to the memory cell can be driven in such a way that they are electrically isolated in the sense amplifier for reading or writing of the data signal. As a result, even in the case of a defective memory cell, it is possible to properly read from or write to the memory cell.
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