发明名称 THIN FILM PROCESSING SYSTEM
摘要 <p>The deposition system (100) includes a deposition source (114) that generates deposition flux (114) comprising neutral atoms and molecules. A shield (102) defining an aperture (103) is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support (116) is positioned adjacent to the shield. A dual-scanning system (122) scans the substrate support relative to the aperture with a first and a second motion.</p>
申请公布号 WO2002004695(A2) 申请公布日期 2002.01.17
申请号 US2001021517 申请日期 2001.07.09
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