| 摘要 |
A non-volatile semiconductor memory device that includes an address buffer block, a matrix of memory cells, and an output buffer block. The address buffer block receives input signals external to the memory device, that in a first operating mode are controlled by devices outside to the memory device, and transmit signals to the matrix of memory cells, which are adapted to decode the received signals and to transmit in turn output decoded signals through the output buffer block. A command block is provided that is activatable through an external control signal and once activated, it puts the memory device in a second operating mode in which the command block receives at least a part of the signals in output of said matrix of memory cells and, after having processed them, transmits internal address signals to the address buffer block. This provides a feedback inside the memory device capable of making the same able to autonomously execute a succession of instructions stored in the matrix of memory cells.
|
