发明名称 |
High-speed compound semiconductor device operable at large output power with minimum leakage current |
摘要 |
A compound semiconductor device includes a cap layer formed on a channel layer and an insulating film formed on the cap layer, and a &Ggr;-shaped gate electrode is provided in a gate recess opening, wherein an extension part of the &Ggr;-shaped gate electrode extends over the insulating film toward a drain electrode, and the total thickness of the insulating film and the cap layer being is set such that the electric field formed right underneath the extension part of the gate electrode includes a component acting in a direction perpendicular to the substrate.
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申请公布号 |
US2002005528(A1) |
申请公布日期 |
2002.01.17 |
申请号 |
US20010906153 |
申请日期 |
2001.07.17 |
申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
NAGAHARA MASAKI |
分类号 |
H01L21/285;H01L21/335;H01L29/06;H01L29/40;H01L29/423;H01L29/778;H01L29/812;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;(IPC1-7):H01L31/109;H01L31/033;H01L31/032 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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