| 摘要 |
The present invention provides a method for fabricating an improved gate electrode of a MOSFET device. And the method for fabricating a MOSFET device having a polycide gate to which a titanium silicide is applied comprises the steps of sequentially forming a polysilicon layer on a gate insulating layer and a titanium layer in this order, forming a capping layer on the titanium layer and forming a titanium silicide layer by performing a rapid thermal process in nitrogen atmosphere.
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