METHOD FOR MANUFACTURING TANTALUM OXIDE THIN FILM FOR CAPACITOR

摘要

PURPOSE: A method for manufacturing a tantalum oxide thin film for a capacitor is provided to reduce manufacturing cost and process time and to form the tantalum oxide thin film of an excellent quality, by using an electrochemical method instead of a sputtering method or chemical vapor deposition method. CONSTITUTION: A rapid thermal process is performed regarding the tantalum oxide thin film in an oxygen atmosphere and at a temperature from 600 to 850 deg.C. The rapid thermal process is performed for an interval of 0.5-5 minutes.