| 发明名称 |
SHALLOW TRENCH ISOLATION HAVING AN ETCHING STOP LAYER AND METHOD FOR FABRICATING SAME |
| 摘要 |
A shallow trench isolation having an etching stop layer and its method of fabrication. The method utilizes a shield layer such as a silicon nitride layer to serve as an etching stop layer. The etching stop layer is formed in the top position of the shallow trench isolation.
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| 申请公布号 |
US2002005560(A1) |
申请公布日期 |
2002.01.17 |
| 申请号 |
US19980089241 |
申请日期 |
1998.06.02 |
| 申请人 |
LEE CHUNG YUAN;SHAO YIH-REN;LEE PEI-ING |
发明人 |
LEE CHUNG YUAN;SHAO YIH-REN;LEE PEI-ING |
| 分类号 |
H01L21/60;H01L21/762;(IPC1-7):H01L29/00;H01L21/76 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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