发明名称 |
SILICATE GATE DIELECTRIC |
摘要 |
A method of forming a silicate dielectric having superior electrical properties comprising forming a metal oxide layer on a Si-containing semiconductor material and reacting the metal oxide with the underlying Si-containing material in the presence of an oxidizing gas is provided. Semiconductor structures comprising the metal silicate formed over a SiO2 layer are also disclosed herein.
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申请公布号 |
US2002005556(A1) |
申请公布日期 |
2002.01.17 |
申请号 |
US19990413462 |
申请日期 |
1999.10.06 |
申请人 |
CARTIER EDUARD ALBERT;COPEL MATTHEW WARREN;ROSS FRANCES MARY |
发明人 |
CARTIER EDUARD ALBERT;COPEL MATTHEW WARREN;ROSS FRANCES MARY |
分类号 |
H01L21/02;H01L21/28;H01L29/51;(IPC1-7):H01L29/92 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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